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 MPSW13 One Watt Darlington Transistor
NPN Silicon
Features http://onsemi.com
COLLECTOR 3 BASE 2
* Pb-Free Package is Available*
MAXIMUM RATINGS
Rating Collector -Emitter Voltage Collector -Base Voltage Emitter -Base Voltage Collector Current - Continuous Total Device Dissipation @ TA = 25C Derate above 25C Total Device Dissipation @ TC = 25C Derate above 25C Operating and Storage Junction Temperature Range Symbol VCES VCBO VEBO IC PD PD TJ, Tstg Value 30 30 10 1.0 1.0 8.0 2.5 20 -55 to +150 Unit Vdc Vdc Vdc Adc W mW/C W mW/C C 1 2
EMITTER 1
TO-92 (TO-226) CASE 29-10 STYLE 1 3
THERMAL CHARACTERISTICS
Characteristic Thermal Resistance, Junction-to-Ambient Thermal Resistance, Junction-to-Case Symbol RqJA RqJC Max 125 50 Unit C/W C/W MPS W13 AYWW G G
MARKING DIAGRAM
Maximum ratings are those values beyond which device damage can occur. Maximum ratings applied to the device are individual stress limit values (not normal operating conditions) and are not valid simultaneously. If these limits are exceeded, device functional operation is not implied, damage may occur and reliability may be affected.
MPSW13 = Device Code A = Assembly Location Y = Year WW = Work Week G = Pb-Free Package (Note: Microdot may be in either location)
ORDERING INFORMATION
Device MPSW13RLRA MPSW13RLRAG Package TO-92 TO-92 (Pb-Free) Shipping 2,000/Tape & Reel 2,000/Tape & Reel
*For additional information on our Pb-Free strategy and soldering details, please download the ON Semiconductor Soldering and Mounting Techniques Reference Manual, SOLDERRM/D.
(c) Semiconductor Components Industries, LLC, 2006
For information on tape and reel specifications, including part orientation and tape sizes, please refer to our Tape and Reel Packaging Specifications Brochure, BRD8011/D. Publication Order Number: MPSW13/D
1
February, 2006 - Rev. 4
MPSW13
ELECTRICAL CHARACTERISTICS (TA = 25C unless otherwise noted)
Characteristic OFF CHARACTERISTICS Collector -Emitter Breakdown Voltage (IC = 100 mAdc, VBE = 0) Collector Cutoff Current (VCB = 30 Vdc, IE = 0) Emitter Cutoff Current (VEB = 10 Vdc, IC = 0) ON CHARACTERISTICS (Note 1) DC Current Gain (IC = 10 mAdc, VCE = 5.0 Vdc) (IC = 100 mAdc, VCE = 5.0 Vdc) Collector-Emitter Saturation Voltage (IC = 100 mAdc, IB = 0.1 mAdc) Base-Emitter On Voltage (IC = 100 mAdc, VCE = 5.0 Vdc) SMALL-SIGNAL CHARACTERISTICS Current-Gain - Bandwidth Product (Note 2) (IC = 10 mAdc, VCE = 5.0 Vdc, f = 100 MHz) 1. Pulse Test: Pulse Width v 300 ms, Duty Cycle v 2.0%. 2. fT = |hfe| * ftest. fT 125 - MHz hFE 5,000 10,000 VCE(sat) VBE(on) - - - - 1.5 2.0 Vdc Vdc - V(BR)CES ICBO IEBO 30 - - - 100 100 Vdc nAdc nAdc Symbol Min Max Unit
I C , COLLECTOR CURRENT (mA)
3.0 k 2.0 k
CURRENT LIMIT DUTY CYCLE 10% THERMAL LIMIT SECOND BREAKDOWN LIMIT 100 ms 1.0 ms
1.0 k 1.0 s 500 TA = 25C 200 1.5 TC = 25C
2.0
5.0
10
20
30
VCE, COLLECTOR-EMITTER VOLTAGE (VOLTS)
Figure 1. Active Region - Safe Operating Area
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2
MPSW13
TJ = 125C VCE , COLLECTOR EMITTER VOLTAGE (VOLTS) 200 k 100 k 70 k 50 k 30 k 20 k 10 k 7.0 k 5.0 k -55C VCE = 5.0 V 3.0 2.5 2.0 1.5 1.0 0.5 0.1 IC = 10 mA IC = 50 mA IC = 250 mA IC = 500 mA TJ = 25C
h FE , DC CURRENT GAIN
25C
3.0 k 2.0 k 5.0 7.0 10
20
30
50 70 100
200 300
500
0.2
0.5 1.0 2.0
5.0 10
20
50
100 200
500 1000
IC, COLLECTOR CURRENT (mA)
IB, BASE CURRENT (mA)
Figure 2. DC Current Gain
Figure 3. Collector Saturation Region
q V , TEMPERATURE COEFFICIENTS (mV/ C)
1.6 TJ = 25C 1.4 V, VOLTAGE (VOLTS) VBE(sat) @ IC/IB = 1000 1.2 1.0 0.8 0.6 VBE(on) @ VCE = 5.0 V
-1.0 -2.0 -3.0 -4.0
*APPLIES FOR IC/IB hFE/3.0
*qVC FOR VCE(sat)
25C TO 125C
-55C TO 25C
25C TO 125C
qVB FOR VBE
VCE(sat) @ IC/IB = 1000 5.0 7.0 10 20 30 50 70 100 200 300 500
-5.0 -6.0
-55C TO 25C
5.0 7.0 10
20
30
50
70 100
200 300
500
IC, COLLECTOR CURRENT (mA)
IC, COLLECTOR CURRENT (mA)
Figure 4. "ON" Voltages
Figure 5. Temperature Coefficients
4.0 h FE , SMALL-SIGNAL CURRENT GAIN VCE = 5.0 V TJ = 25C f = 100 MHz
20 TJ = 25C C, CAPACITANCE (pF) 10 7.0 5.0 Cobo Cibo
2.0
1.0 0.8 0.6 0.4 0.2
3.0 2.0
0.5
1.0
2.0
5.0
10
20
50
100
200
500
0.04
0.1
0.2
0.4
1.0
2.0
4.0
10
20
40
IC, COLLECTOR CURRENT (mA)
VR, REVERSE VOLTAGE (VOLTS)
Figure 6. High Frequency Current Gain
Figure 7. Capacitance
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3
MPSW13
PACKAGE DIMENSIONS
TO-92 (TO-226) CASE 29-10 ISSUE AL
A
R P F L
B
SEATING PLANE
NOTES: 1. DIMENSIONING AND TOLERANCING PER ANSI Y14.5M, 1982. 2. CONTROLLING DIMENSION: INCH. 3. CONTOUR OF PACKAGE BEYOND DIMENSION R IS UNCONTROLLED. 4. DIMENSION F APPLIES BETWEEN P AND L. DIMENSIONS D AND J APPLY BETWEEN L AND K MIMIMUM. LEAD DIMENSION IS UNCONTROLLED IN P AND BEYOND DIMENSION K MINIMUM. DIM A B C D F G H J K L N P R INCHES MIN MAX 0.175 0.205 0.290 0.310 0.125 0.165 0.018 0.021 0.016 0.019 0.045 0.055 0.095 0.105 0.018 0.024 0.500 --- 0.250 --- 0.080 0.105 --- 0.100 0.135 --- MILLIMETERS MIN MAX 4.44 5.21 7.37 7.87 3.18 4.19 0.457 0.533 0.407 0.482 1.15 1.39 2.42 2.66 0.46 0.61 12.70 --- 6.35 --- 2.04 2.66 --- 2.54 3.43 ---
K
XX G H R
123
D J SECTION X-X
NC
N
STYLE 1: PIN 1. EMITTER 2. BASE 3. COLLECTOR
ON Semiconductor and are registered trademarks of Semiconductor Components Industries, LLC (SCILLC). SCILLC reserves the right to make changes without further notice to any products herein. SCILLC makes no warranty, representation or guarantee regarding the suitability of its products for any particular purpose, nor does SCILLC assume any liability arising out of the application or use of any product or circuit, and specifically disclaims any and all liability, including without limitation special, consequential or incidental damages. "Typical" parameters which may be provided in SCILLC data sheets and/or specifications can and do vary in different applications and actual performance may vary over time. All operating parameters, including "Typicals" must be validated for each customer application by customer's technical experts. SCILLC does not convey any license under its patent rights nor the rights of others. SCILLC products are not designed, intended, or authorized for use as components in systems intended for surgical implant into the body, or other applications intended to support or sustain life, or for any other application in which the failure of the SCILLC product could create a situation where personal injury or death may occur. Should Buyer purchase or use SCILLC products for any such unintended or unauthorized application, Buyer shall indemnify and hold SCILLC and its officers, employees, subsidiaries, affiliates, and distributors harmless against all claims, costs, damages, and expenses, and reasonable attorney fees arising out of, directly or indirectly, any claim of personal injury or death associated with such unintended or unauthorized use, even if such claim alleges that SCILLC was negligent regarding the design or manufacture of the part. SCILLC is an Equal Opportunity/Affirmative Action Employer. This literature is subject to all applicable copyright laws and is not for resale in any manner.
PUBLICATION ORDERING INFORMATION
LITERATURE FULFILLMENT: N. American Technical Support: 800-282-9855 Toll Free Literature Distribution Center for ON Semiconductor USA/Canada P.O. Box 61312, Phoenix, Arizona 85082-1312 USA Phone: 480-829-7710 or 800-344-3860 Toll Free USA/Canada Japan: ON Semiconductor, Japan Customer Focus Center 2-9-1 Kamimeguro, Meguro-ku, Tokyo, Japan 153-0051 Fax: 480-829-7709 or 800-344-3867 Toll Free USA/Canada Phone: 81-3-5773-3850 Email: orderlit@onsemi.com ON Semiconductor Website: http://onsemi.com Order Literature: http://www.onsemi.com/litorder For additional information, please contact your local Sales Representative.
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4
MPSW13/D


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